The IGBT 40N120 YJ (IGBT012) is a high-voltage insulated gate bipolar transistor engineered for precision and reliability in demanding industrial applications.
With a collector-emitter voltage rating of 1200V and a current handling capacity of 40A, this IGBT ensures high-efficiency power conversion, low conduction losses, and superior switching performance.
Its robust TO-247 package allows for efficient thermal management and long service life, making it an excellent choice for welding inverters, induction heating systems, UPS, SMPS, and motor drives.
Built with advanced IGBT technology, the 40N120 YJ delivers stable performance under heavy-duty operations while ensuring optimal energy efficiency.
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